symbol v ds v gs i dm t j , t stg symbol typ max 31 40 63 75 r q jl 21 30 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w 8 gate-source voltage drain-source voltage -12 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv -9 -20 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 3 2.1 -55 to 150 t a =70c i d -11 AO4437 12v p-channel mosfet product summary v ds (v) = -12v i d = -11 a (v gs = -4.5v) r ds(on) < 16m w (v gs = -4.5v) r ds(on) < 20m w (v gs = -2.5v) r ds(on) < 25m w (v gs = -1.8v) esd rating: 4kv hbm 100% uis tested 100% rg tested general description the AO4437 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable fo r use as a load switch or in pwm applications. it is esd prot ected. soic-8 top view bottom view d d d d s s s g s g d alpha & omega semiconductor, ltd.
AO4437 symbol min typ max units bv dss -12 v -1 t j =55c -5 1 m a 10 m a v gs(th) -0.3 -0.55 -1 i d(on) -20 a 12.4 16 t j =125c 17 21 15.9 20 m w 20.4 25 m w g fs 38 s v sd -0.74 -1 v i s -4.5 a c iss 3960 4750 pf c oss 910 pf c rss 757 pf r g 6.9 8.5 w q g 37 47 nc q gs 4.5 nc q gd 11 nc t d(on) 15 ns t r 43 ns t d(off) 158 ns t f 95 ns t rr 64 ns q rr 50 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delay time dynamic parameters i f =-11a, di/dt=100a/ m s v gs =0v, v ds =-6v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-6v, i d =-11a gate source charge gate drain charge turn-on rise time turn-off delay time v gs =-4.5v, v ds =-6v, r l =0.55 w , r gen =3 w m w v gs =-2.5v, i d =-10a i s =-1a,v gs =0v v ds =-5v, i d =-11a i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-9.6v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current v ds =0v, v gs =4.5v i gss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-11a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-1.8v, i d =-6a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-11a reverse transfer capacitance a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev3: nov. 2010 alpha & omega semiconductor, ltd.
AO4437 typical electrical and thermal characteristics 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2 1.4 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 15 20 25 30 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =-6a, v gs =-1.8v i d =-10a, v gs =-2.5v i d =-11a, v gs =-4.5v 0 5 10 15 20 25 30 35 40 0 2 4 6 8 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) i d =-11a 25c 125c 25c 125c v ds =-5v v gs =-1.8v v gs =-2.5v v gs =-4.5v 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.0v -1.5v -2.0v -8.0v alpha & omega semiconductor, ltd.
AO4437 typical electrical and thermal characteristics 0.00e+00 1.00e+00 2.00e+00 3.00e+00 4.00e+00 5.00e+00 0 5 10 15 20 25 30 35 40 45 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 800 1600 2400 3200 4000 4800 5600 6400 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s v ds =-6v i d =-11a t j(max) =150c t a =25c alpha & omega semiconductor, ltd.
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